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Study of surface exfoliation on crystalline silicon induced by Co-implantation of He and H ions
crystalline Si He and H ion implantation surface blistering and exfoliation bubbles growth
2009/8/14
Crystalline n-type Si (100) wafers were implanted at room temperature with
160 keV He ions to a fluence of 5×1016cm－2 or 40 keV H ions to a fluence of 1×1016cm－2, singly or in combination, followed ...
Surface morphology of He-implanted single-crystalline silicon
crystalline silicon He ion implantation He bubble Cavities blisters morphology
2009/8/14
Single-crystalline Si (100) samples were implanted with 30 keV He2+ ions to doses ranging from 2.0×1016 to 2.0×1017ions /cm2 and subsequently thermally annealed at 800℃ for 30min. The morphological ch...